Conference Bag

This year, we're excited to go digital with our conference bags! Each partner logo provides access to valuable materials from our sponsors, enhancing your exhibition experience. You'll also find the conference proceedings available on this page.

Exhibitor Materials/Brochures

Explore the promotional materials from our exhibitors to revisit the highlights of your time in Munich.

Conference Proceedings

You may download individual session PDFs for your convenience or access the complete collection of proceedings from the 2024 conference below.

We will constantly update this page with the proceedings as they will be provided by the speakers.

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S1
  Guy Moxey (Wolfspeed)
  What it takes to make it real: Opportunities and challenges moving to 1500-V architectures
S2
  Aleš Loidl (STMicroelectronics)
  Hidden pits of SiC MOSFET benchmarking and evaluation
S3
  Dr. David Sheridan (Alpha and Omega Semiconductor)
  Application Stability of Fast Switching Planar SiC MOSFETs
S4
  Dr. Peter Friedrichs (Infineon)
  Pushing the SiC portfolio boundaries - 400V and 3.3kV SiC MOSFETs
S5
  Dr. Ajay Poonjal Pai (Sanan Semiconductors)
  Soft-switching for Automotive Traction Inverter Applications
S6
  Alfred Hesener (Navitas)
  GaN & SiC Technologies Enable Next-Gen AI Data Centers
S7
  Dr. Ing. Tomas Krecek (Microchip Technology)
  SiC Power Packaging Unlocks Full Potential of High-Power Applications
S8
  Dr. Josef Weinbub (Silvaco)
  Utilizing Physics-Based AI-Powered Digital Twins to Accelerate Design Optimization and Manufacturing Yield of SiC Power Devices
S9
  Francois Perraud (Littelfuse)
  50% more power from SiC chips in high performance ceramic-isolated discrete packages
S10
  Maurice Clair  (3D-Micromac)
  Enhanced laser annealing for ohmic contact formation for SiC power devices
S11
  Dr. Nils Soltau (Mitsubishi Electric)
  For Reliable and Competitive SiC Power Converters
S12
  Emiliano Meza (Semikron Danfoss)
  Powering the Future: Harnessing 2kV SiC for a Decentralized Grid
S13
  Imane Fouaide (ROHM Semiconductor)
  SiC power module challenges for EV applications
S14
  Dr. Didier Balocco (onsemi)
  Accurate SiC Simulation in SPICE and PLECS
S15
  Hadiuzzaman Syed (Bosch)
  2nd Generation 1200 V SiC MOSFET: Robust against Radiation and Better in RDS,on
S16
  David Chilachava (Vincotech)
  Use cases of SiC Technology in industrial Applications
S17
  Dr. Georgio El-Zammar (Nexperia)
  SiC MOSFET with high temperature stability
S18
  Dr. Alexander Küllmer (Rohde & Schwarz)
  Challenges of measuring high-voltage Wide Bandgap devices
S19
  Mike Sandyck (CISSOID)
  SiC Inverter Control Modules & Reference Designs: How to increase efficiency and accelerate time to market
S20
  Mario Zotes (Infineon)
  SiC MOSFET 750 V Generation 2: enhancing bidirectional charging of electric vehicles and boosting their performance
G1
  Oliver Bleck (Infineon)
  GaN innovations: solutions creating value in power electronics
G2
  Marco Palma (Efficient Power Conversion (EPC))
  Humanoid Robots Dexterity Powered by GaN FETs and ICs
G3
  Balu Balakrishnan (Power Integrations)
  Now Rated to 1700V, is GaN Set to Replace SiC Above a Kilovolt?
G4
  Stanislav Divín (STMicroelectronics)
  Kiss your heatsink goodbye: A kilowatt motor inverter based on GaN
G5
  Dr. Denis Marcon (Innoscience Europe)
  Price competitive GaN power devices are the technology of choice for high-efficiency, compact and cost-effective power systems
G6
  David Chilachava (Vincotech)
  Utilization of GaN in Industrial Power Module Packages
G7
  Farhan Beg (Cambridge GaN Devices)
  Powering the Future : ICeGaN’s role in redefining power supply performance for Next- Gen Data Centres
G8
  Dario Pagnano (Nexperia)
  Maximizing application benefits with GaN: a comparison of commercial technologies
G9
  Hans Winter (VisIC Technologies)
  D³GaN is breaking the boundaries of EV inverter efficiency
G10
  Andrew Patterson (Silvaco)
  Using TCAD to understand GaN design dependencies for Electric Vehicle applications
G11
  Alfred Hesener (Navitas)
  Driving electric Motors with GaN power ICs
G12
  Gabriele Gherdovich (STMicroelectronics)
  Smart power GaN technology for higher energy efficiency
G13
  Harald Parzhuber (Texas Instruments)
  How to improve efficiency in solar power systems with wide bandgap devices
G14
  Marco Palma (Efficient Power Conversion (EPC))
  GaN Advantage in Multilevel Totem Pole PFC
G15
  Dr. Reza Barzegarkhoo (Kiel University)
  Monolithic Bidirectional GaN-Device: Opportunity and Challenges for Highly Efficient Design of Power Electronics Converters
G16
  Dr. Samaneh Sharbati (University of Southern Denmark)
  (presentation title to be confirmed)
G17
  Marcus Sonst (Rohde & Schwarz)
  Overcoming Measurement Challenges in High-Speed GaN/SiC Power Devices
G18
  Dr. Enrique Rodriguez Diaz  (Plexim)
  Real-time simulation for SiC/GaN devices with 1.5 MHz switching frequency
G19
  Andrea Vinci (Tektronix)
  Innovative approaches to improve accuracy in dynamic switching characterization and Rds ON measurement
G20
  Alfred Hesener (Navitas)
  Bi-directional GaNFast for next generation high-performance topologies